內容大綱:
1. PH:金氧半物理 (MOS Physics)
2. CV:金氧半電容特性 (MOS CV Characteristics)
3. I T:界面陷阱特性 (Interface Trap Characteristics)
4. SO:矽及氧化層特性 (Si and Oxide Characteristics)
5. CTL:氧化層電荷控制 (Oxide Charge Control)
6. FET:金氧半場效電晶體 (MOS Field Effect Transistor)
7. TS:電晶體結構 (MOSFET Structures)
本課程主要針對現今IC中最主要元件『金氧半元件』做一深入且偏向實際物理結構、特性、及量測方面之介紹，對研究生而言，不論研究領域是何種專長，金氧半元件特性最好能清楚了解，尤其是對將來要從事IC實際工作者更是需要此方面之知識。本課程前半段著重氧化層及矽基材間之問題探討，後半段著重金氧半場效電晶體之相關性，元件結構設計之相關問題亦在最後一章介紹。
The purpose of this course is to introduce the physics, the characteristics, and the measurement technology of MOS capacitor which is the most important device in IC industry nowadays. For a graduate student, it is of importance to know the basic concept of the characteristics of MOS device, especially for the IC related researcher. The oxide and Si substrate will first be introduced and then the MOSFET including its design problems will be discussed.
Text books：
1. E.H.Nicollian and J.R.Brews, 1982, “MOS(Metal Oxide Semiconductor) Physics and Technology”
2. S.Wolf, 1995 “Silicon Processing for the VLSI Era, Volume 3 -The Submicron MOSFET”
3. Y.P.Tsividis, 1988, “Operation and Modeling of The MOS Transistor”
4. IEDM papers
Score Calculation：Home work 40%，Midterm exam 30%，Final exam 30%
Pre Course：Solid-State Electronics